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2SC2660A Folha de dados(PDF) 2 Page - Savantic, Inc. |
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2SC2660A Folha de dados(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2660 2SC2660A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50m A 1.0 V VBE Base-emitter on voltage IC=0.4A ; VCE=10V 1.0 V 2SC2660 150 V(BR)CEO Collector-emitter breakdown voltage 2SC2660A IC=5mA ;IB=0 180 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.5mA ;IC=0 6 V ICBO Collector cut-off current VCB=200V;IE=0 50 µA IEBO Emitter cut-off current VEB=4V; IC=0 50 µA hFE-1 DC current gain IC=0.15A ; VCE=10V 60 240 hFE-2 DC current gain IC=0.4A ; VCE=10V 50 hFE-1 classifications Q P 60-140 100-240 |
Nº de peça semelhante - 2SC2660A |
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Descrição semelhante - 2SC2660A |
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