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2SD1849 Folha de dados(PDF) 2 Page - Savantic, Inc. |
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2SD1849 Folha de dados(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1849 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.4A 8.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.4A 1.5 V VCB=750V; IE=0 10 µA ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 5 25 hFE-2 DC current gain IC=6A ; VCE=10V 4 fT Transition frequency IC=1A ; VCE=10V;f=0.5MHz 2 MHz VF Diode forward voltage IC=7A 2.0 V |
Nº de peça semelhante - 2SD1849 |
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Descrição semelhante - 2SD1849 |
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