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2SD1894 Folha de dados(PDF) 2 Page - Savantic, Inc. |
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2SD1894 Folha de dados(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1894 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ; IB=0 140 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=6mA 2.5 V VBEsat Base-emitter saturation voltage IC=6A ;IB=6mA 3.0 V ICBO Collector cut-off current VCB=160V; IE=0 100 µA ICEO Collector cut-off current VCE=140V; IB=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=1A ; VCE=5V 2000 hFE -2 DC current gain IC=6A ; VCE=5V 5000 30000 fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 2.5 µs ts Storage time 5.0 µs tf Fall time IC=6A; VCC=50V IB1=-IB2=6mA 2.5 µs hFE-2 Classifications Q P 5000-15000 8000-30000 |
Nº de peça semelhante - 2SD1894 |
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Descrição semelhante - 2SD1894 |
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