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2SC4108 Folha de dados(PDF) 2 Page - Savantic, Inc. |
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2SC4108 Folha de dados(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4108 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=: 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 0.8 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1.6A ; VCE=5V 15 50 hFE-2 DC current gain IC=8A ; VCE=5V 10 hFE-3 DC current gain IC=10mA ; VCE=5V 10 fT Transition frequency IC=1.6A ; VCE=10V 20 MHz COB Collector output capacitance f=1MHz ; VCB=10V 160 pF Switching times ton Turn-on time 0.5 µs tstg Storage time 2.5 µs tf Fall time IC=10A;IB1=2A; IB2=-4A;RL=20C VCC=200V 0.3 µs hFE-1 classifications L M N 15-30 20-40 30-50 |
Nº de peça semelhante - 2SC4108 |
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Descrição semelhante - 2SC4108 |
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