BC808

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in drive and output stages of audio

amplifiers.

Pinning

1 = Base

2 = Emitter

3 = Collector

.091(2.30)

.067(1.70)

SOT-23

Dimensions in inches and (millimeters)

.063(1.60)

.055(1.40)

.108(0.65)

.089(0.25)

.045(1.15)

.034(0.85)

.118(3.00)

.110(2.80)

.020(0.50)

.012(0.30)

.0043(0.11)

.0035(0.09)

.004

(0.10)

.051(1.30)

.035(0.90)

.026(0.65)

.010(0.25)

Max

.027(0.67)

.013(0.32)

2

1

3

Characteristic

Symbol

Rating

Unit

Collector-Emitter Voltage

-30

V

-25

V

Emitter-Base Voltage

-5

V

Collector Current

-500

mA

Total Power Dissipation

225

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Emitter Breakdown Voltage

-30

-

-

V

µA

-25

-

-

V

Emitter-Base Breakdown Volatge

-5

-

-

V

µA

Collector Cutoff Current

-

-

-0.1

µA

Emitter Cutoff Current

-

-

-0.1

µA

-

-

-0.7

V

Base-Emitter On Voltage

-

-

-1.2

V

100

-

600

-

Transition Frequency

-

100

-

MHz

Output Capacitance

-

-

8

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

16

25

40

Range

100~250

160~400

250~600