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SI4162DY Folha de dados(PDF) 4 Page - Vishay Siliconix |
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SI4162DY Folha de dados(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 68967 S-82621-Rev. A, 03-Nov-08 Vishay Siliconix Si4162DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = - 50 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 012 3 45 67 8 910 TJ =25 °C TJ = 125 °C VGS - Gate-to-Source Voltage (V) Time (s) 0 20 40 60 80 100 0 1 1 1 0 0 . 0 0.01 0.1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 100 µs 1s 10 s Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms 100 s, DC 10 µs |
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