2SA1201 datasheet(1/2 Pages) SECOS

Nome de Peças	2SA1201

Descrição Electrónicos	PNP Silicon Epitaxial Planar Transistor

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Fabricante Electrônico	SECOS [SeCoS Halbleitertechnologie GmbH]

Página de início	http://www.secosgmbh.com

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FEATURES

High voltage

High transition frequency

Complementary to 2SC2881

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.8

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA,IE=0

-120

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-120

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-120V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-5V,IC=-100mA

80

240

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-1

V

Base-emitter voltage

VBE

VCE=-5V,IC=-500mA

-1

V

Transition frequency

fT

VCE=-5V,IC=-100mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF

hFE

Rank

O

Y

Range

80-160

120-240

Marking

DO

DY

Any changing of specification will not be informed individual

2SA1201

PNP Silicon

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

08-May-2007 Rev. A

Page 1 of 2

SOT-89

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

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