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2SC1213 Folha de dados(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2SC1213 Folha de dados(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page Elektronische Bauelemente 2SC1213 & 2SC1213A PNP Silicon General Purpose Transistor http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 2 0 20 60 40 80 100 140 120 20 510 Collector Current IC (mA) DC Current Transfer Ratio vs. Collector Current 50 100 200 500 VCE = 3 V Ta = 25 °C 0 200 400 600 50 Ambient Temperature Ta ( °C) Maximum Collector Dissipation Curve 100 150 0 20 40 60 80 100 4 2 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (1) 68 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 mA IB = 0 P C = 400 mW 0 100 200 300 400 500 4 2 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) 68 10 2 3 4 5 6 7 8 IB = 0 1 mA P C = 400 mW 9 10 0 0.3 1.0 3 10 30 0.4 0.2 Base to Emitter Voltage VBE (V) Typical Transfer Characteristics 0.6 0.8 1.0 1.2 VCE = 3 V 01-Jun-2002 Rev. A Page 2 of 2 |
Nº de peça semelhante - 2SC1213 |
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Descrição semelhante - 2SC1213 |
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