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2SD1819A Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD1819A Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page FEATURES High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB1218A ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC =2mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 7 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 μA Base cut-off current ICEO VCE=10V, IB=0 100 μA Emitter cut-off current IEBO VEB=7V, IC=0 0.1 μA hFE(1) VCE=10V, IC=2mA 160 460 DC current gain hFE(2) VCE=2V, IC=100mA 90 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Transition frequency fT VCB=10V, IC=2mA, f=200MHz 150 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 3.5 pF CLASSIFICATION OF hFE(1) Rank Q R S Range 160-260 210-340 290-460 Marking ZQ ZR ZS Any changing of specification will not be informed individual http://www.SeCoSGmbH.com 2SD1819A NPN Silicon General Purpose Transistor RoHS Compliant Product COLLECTOR BASE EMITTER Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm SOT-323 K J C H L A B S G V 3 1 2 D Top View 1 2 3 Elektronische Bauelemente 01-Jun-2007 Rev. A Page 1 of 2 MAXIMUM RATINGS* TA=25 unless otherwise noted ℃ Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ |
Nº de peça semelhante - 2SD1819A |
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Descrição semelhante - 2SD1819A |
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