Dated : 19/12/2005
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BC817 / BC818
NPN Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier application,
These transistors are subdivided into three groups
–16, -25, -40 according to their current gain.
As complementary types, the PNP transistors
BC807 and BC808 are recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
BC817
BC818
VCBO
50
30
V
Collector Emitter Voltage
BC817
BC818
VCEO
45
25
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Power Dissipation
Ptot
200
mW
Thermal Resistance , Junction to Ambient
RθJA
500
K/W
Junction Temperature
TJ
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
C
Electrical Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group
at VCE = 1 V, IC = 500 mA
-16
-25
-40
hFE
hFE
hFE
hFE
100
160
250
40
-
-
-
-
250
400
600
-
-
-
-
-
Collector Base Cutoff Current
at VCB = 20 V
ICBO
-
-
100
nA
Emitter-Base Cutoff Current
at VEB = 5 V
IEBO
-
-
100
nA
Collector Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCEsat
-
-
0.7
V
Base-Emitter Voltage
at IC = 500 mA, VCE = 1 V
VBE(on)
-
-
1.2
V
Gain -Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
fT
100
-
-
MHz
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHz
CCBO
-
5
-
pF
SOT-23 Plastic Package
Portuguese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
