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TC254P Folha de dados(PDF) 2 Page - Texas Instruments |
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TC254P Folha de dados(HTML) 2 Page - Texas Instruments |
2 / 16 page TC254P 336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) Charge is converted to signal voltage with a 12- µV per electron conversion factor by a high-performance charge-detection structure with built-in automatic reset and a voltage reference generator. The signal is buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability. The TC254P is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC254P is characterized for operation from –10 °C to 45°C. functional block diagram Amplifier OUT ADB IAG2 1 4 SAG 6 IAG1 ABG 7 8 Storage Area Blooming Protection Image Area With Dark Reference Elements 2 SUB 2 Dummy Elements 3 Serial Register SRG 5 Clear Line Clearing Drain |
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