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TPIC2701N Folha de dados(PDF) 2 Page - Texas Instruments

Nome de Peças TPIC2701N
Descrição Electrónicos  7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
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TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-source voltage, VDS
60 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-source voltage, VGS
±20 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Clamp-drain voltage, VCD
60 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous source-drain diode current
0.5 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed drain current, each output, ID (see Note 1 and Figure 17)
3 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed clamp current, ICL (see Note 1 and Figure 18)
3 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous drain current, each output, all outputs on
0.5 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single-pulse avalanche energy, EAS (see Figure 4)
22 mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, TJ:TPIC2701
– 40
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
TPIC2701M
– 55
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Operating case temperature range, TC: TPIC2701
– 40
°C to 125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TPIC2701M
– 55
°C to 125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–65
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: N Package
260
°C
. . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: J Package
300
°C
. . . . . . . . . . . . . . . . . . . . .
NOTE 1: Pulse duration = 10 ms, duty cycle = 6%.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
TA = 125°C
POWER RATING
J
2660 mW
21.3 mW/
°C
1701 mW
1382 mW
530 mW
N
1400 mW
11.0 mW/
°C
905 mW
740 mW
300 mW
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TPIC2701
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DS Drain-source breakdown voltage
ID = 1 µA,
VGS = 0
60
V
VTGS
Gate-source threshold voltage
ID = 1 mA,
VDS = VGS
1.2
1.75
2.4
V
VDS(on)
Drain-source on-state voltage
ID = 0.5 A,
VGS = 15 V,
See Notes 2 and 3
0.25
0.4
V
IDSS
Zero gate voltage drain current
VDS =48V
VGS =0
TC = 25°C
0.05
1
µA
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
VGS = 0
TC = 125°C
0.5
10
µA
IGSSF
Forward gate current, drain short circuited to
source
VGS = 20 V,
VDS = 0
10
100
nA
IGSSR
Reverse gate current, drain short circuited to
source
VGS = – 20 V, VDS = 0
10
100
nA
rDS( )
Forward drain source on state resistance
VGS = 15 V,
ID = 0.5 A,
See Notes 2 and 3 and
TC = 25°C
0.5
0.8
rDS(on)
Forward drain-source on-state resistance
See Notes 2 and 3 and
Figures 5 and 6
TC = 125°C
0.8
1.3
g
fs
Forward transconductance
VDS = 15 V,
ID = 0.5 A,
See Notes 2 and 3
0.5
0.8
S
Ciss
Short-circuit input capacitance, common source
105
Coss
Short-circuit output capacitance, common source
VDS =25V
VGS =0
f = 300 kHz
65
pF
Crss
Short-circuit reverse transfer capacitance,
common source
VDS = 25 V,
VGS = 0,
f = 300 kHz
15
F
NOTES:
2. Technique should limit TJ – TC to 10°C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts with a single output
transistor conducting.


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