BDX53B datasheet(1/6 Pages) MOTOROLA

Nome de Peças	BDX53B

Descrição Electrónicos	Plastic Medium-Power Complementary Silicon Transistors

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Fabricante Electrônico	MOTOROLA [Motorola, Inc]

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Motorola Bipolar Power Transistor Device Data

Plastic Medium-Power

Complementary Silicon

Transistors

. . . designed for general–purpose amplifier and low–speed switching applications.

• High DC Current Gain —

hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector Emitter Sustaining Voltage — @ 100 mAdc

VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B

VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

• TO–220AB Compact Package

MAXIMUM RATINGS

Rating

Symbol

BDX53B

BDX54B

BDX53C

BDX54C

Unit

Collector–Emitter Voltage

VCEO

80

100

Vdc

Collector–Base Voltage

VCB

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

8.0

12

Adc

Base Current

IB

0.2

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

60

0.48

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

70

_C/W

Thermal Resistance, Junction to Case

R

θJC

70

_C/W

80

40

20

0

20

40

80

100

120

160

Figure 1. Power Derating

T, TEMPERATURE (

°C)

60

TA TC

4.0

2.0

1.0

3.0

0

60

140

TA

TC

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BDX53B/D

BDX53B

BDX53C

BDX54B

BDX54C

DARLINGTON

8 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 – 100 VOLTS

65 WATTS

CASE 221A–06

TO–220AB

NPN

PNP

REV 7

Nº de peça semelhante - BDX53B

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Mospec Semiconductor	BDX53B	187Kb / 4P	POWER TRANSISTORS(8A.,45-100V,60W)
ON Semiconductor	BDX53B	106Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2007 - Rev. 13
ON Semiconductor	BDX53B	169Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS 1995 REV 7
List of Unclassifed Man...	BDX53B	810Kb / 5P	BASE NPN / PNP
Power Innovations Ltd	BDX53B	150Kb / 6P	NPN SILICON POWER DARLINGTONS

More results

Descrição semelhante - BDX53B

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Boca Semiconductor Corp...	TIP110	153Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	2N6040	152Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 10
ON Semiconductor	TIP120	144Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 9
New Jersey Semi-Conduct...	MJE2100	144Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	TIP110	148Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 8
	BDX53B	115Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 15
	2N6040	114Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors April, 2002 ??Rev. 4
	BDX53B	87Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors February, 2006 ??Rev. 12
New Jersey Semi-Conduct...	MJE1090	143Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	TIP120	91Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors September, 2005 ??Rev. 6

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BDX53B Folha de dados(PDF) 1 Page - Motorola, Inc

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