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AM42-0007-DIE Folha de dados(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Nome de Peças AM42-0007-DIE
Descrição Electrónicos  GaAs MMIC Power Amplifier, 2 W 14.0 - 14.5 GHz
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Fabricante Electrônico  MA-COM [M/A-COM Technology Solutions, Inc.]
Página de início  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

AM42-0007-DIE Folha de dados(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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GaAs MMIC Power Amplifier, 2.0 W
14.0 - 14.5 GHz
Rev. V6
AM42-0007-DIE
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Functional Schematic
Features
• High Linear Gain: 22 dB Typical.
• High Saturated Output Power: +33 dBm Typical
• High Power Added Efficiency: 22% Typical
• High P1dB: +32 dBm Typical
• 50 Ω Input / Output Broadband Matched
• Integrated Output Power Detector
• High Performance Ceramic Bolt Down Package
Description
The AM42-0007-DIE is a three stage MMIC linear
power amplifier fabricated on a mature 0.5 micron
MBE based GaAs process.
The AM42-0007-DIE
employs a fully
matched chip with integral bias
networks and output power detector.
This GaAs MMIC power amplifier is ideally suited for
used as an output stage or driver in applications for
VSAT applications.
Ordering Information
Part Number
Package
AM42-0007-DIE
DIE
Absolute Maximum Ratings
1,2
Parameter
Absolute Maximum
VDD
+12 Volts
VGG
-10 Volts
Power Dissipation
17.9 W
RF Input Power
+23 dBm
ChannelTemperature
+150 °C
Storage Temperature
-65 °C to +150 °C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. Back of die temperature (TB) = +25°C.
Typical Bias Configuration
3,4
3. Nominal bias is obtained by first connecting –5 volts to pin VGG
(resistor network used) followed by connecting +9 volts to pin
VDD. Note sequence.
4.
It is recommended that the die be mounted with Au/Sn eutectic
performs for good RF ground and thermal interface.


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