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AM42-0007-DIE Folha de dados(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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AM42-0007-DIE Folha de dados(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 3 page 1 GaAs MMIC Power Amplifier, 2.0 W 14.0 - 14.5 GHz Rev. V6 AM42-0007-DIE • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Functional Schematic Features • High Linear Gain: 22 dB Typical. • High Saturated Output Power: +33 dBm Typical • High Power Added Efficiency: 22% Typical • High P1dB: +32 dBm Typical • 50 Ω Input / Output Broadband Matched • Integrated Output Power Detector • High Performance Ceramic Bolt Down Package Description The AM42-0007-DIE is a three stage MMIC linear power amplifier fabricated on a mature 0.5 micron MBE based GaAs process. The AM42-0007-DIE employs a fully matched chip with integral bias networks and output power detector. This GaAs MMIC power amplifier is ideally suited for used as an output stage or driver in applications for VSAT applications. Ordering Information Part Number Package AM42-0007-DIE DIE Absolute Maximum Ratings 1,2 Parameter Absolute Maximum VDD +12 Volts VGG -10 Volts Power Dissipation 17.9 W RF Input Power +23 dBm ChannelTemperature +150 °C Storage Temperature -65 °C to +150 °C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. Back of die temperature (TB) = +25°C. Typical Bias Configuration 3,4 3. Nominal bias is obtained by first connecting –5 volts to pin VGG (resistor network used) followed by connecting +9 volts to pin VDD. Note sequence. 4. It is recommended that the die be mounted with Au/Sn eutectic performs for good RF ground and thermal interface. |
Nº de peça semelhante - AM42-0007-DIE |
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Descrição semelhante - AM42-0007-DIE |
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