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FDD6776A Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDD6776A Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C www.fairchildsemi.com 1 January 2009 D G S D G S G S D-PAK (TO-252) Short-Lead I-PAK (TO-251AA) D FDD6776A / FDU6776A_F071 N-Channel PowerTrench® MOSFET 25 V, 7.5 m Ω Features Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 17.7 A Max rDS(on) = 17.0mΩ at VGS = 4.5 V, ID = 13.2 A 100% UIL test RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture MOSFET Maximum Ratings T C = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Package limited) TC = 25 °C 30 A -Continuous (Silicon limited) TC = 25 °C 54 -Continuous TA = 25 °C (Note 1a) 17.7 -Pulsed 100 EAS Single Pulse Avalanche Energy (Note 3) 32 mJ PD Power Dissipation TC = 25 °C 39 W Power Dissipation TA = 25 °C (Note 1a) 3.7 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C RθJC Thermal Resistance, Junction to Case 3.8 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40 Device Marking Device Package Reel Size Tape Width Quantity FDD6776A FDD6776A D-PAK (TO-252) 13 ’’ 12 mm 2500 units FDU6776A FDU6776A_F071 TO-251AA N/A(Tube) N/A 75 units |
Nº de peça semelhante - FDD6776A |
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Descrição semelhante - FDD6776A |
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