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ST2302MSRG Folha de dados(PDF) 1 Page - Stanson Technology

Nome de Peças ST2302MSRG
Descrição Electrónicos  N Channel Enhancement Mode MOSFET
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Fabricante Electrônico  STANSON [Stanson Technology]
Página de início  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST2302MSRG Folha de dados(HTML) 1 Page - Stanson Technology

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ST2302M
N Channel Enhancement Mode MOSFET
3.6A
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2302M 2007. V1
1
DESCRIPTION
The ST2302M is the N-Channel logic enhancement mode power field effect transistor
are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other batter powered circuits, and
low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23
1.Gate
2.Source
3.Drain
PART MARKING
SOT-23
Y: Year Code
A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2302MSRG
SOT-23
S02YA
Process Code : A ~ Z ; a ~ z
ST2302MSRG
S : SOT-23 ; R : Tape Reel ; G : Pb – Free
FEATURE
20V/3.6A, RDS(ON) = 90m-ohm (Typ.)
@VGS = 4.5V
20V/3.1A, RDS(ON) = 130m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3
1
2
D
G
S
3
1
2
S02YA


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