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FDS8882 Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FDS8882
Descrição Electrónicos  N-Channel PowerTrench짰 MOSFET 30 V, 9 A, 20.0 m廓
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8882 Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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December 2008
©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
www.fairchildsemi.com
1
FDS8882
N-Channel PowerTrench® MOSFET
30 V, 9 A, 20.0 m
Features
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
High performance trench technology for extremely low rDS(on)
and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
General Description
The FDS8882 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
Notebook System Regulators
DC/DC Converters
SO-8
D
D
D
D
S
S
S
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
A = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current -Continuous
9
A
-Pulsed
21
EAS
Single Pulse Avalanche Energy
(Note 3)
32
mJ
PD
Power Dissipation
TA = 25 °C
(Note 1a)
2.5
W
Power Dissipation
TA = 25 °C
(Note 1b)
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RθJC
Thermal Resistance, Junction to Case
(Note 1)
25
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS8882
FDS8882
SO8
13 “
12 mm
2500 units


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