Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Toshiba Semiconductor |
HN1C03F
|
197Kb / 4P |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
HN1C03FU
|
197Kb / 4P |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
2SC3326
|
177Kb / 4P |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
|
2SC2878
|
505Kb / 4P |
Silicon NPN Epitaxial Type For Muting and Switching Applications
|
2SC4213
|
177Kb / 4P |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
|
HN1C03F
|
307Kb / 5P |
Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
|
2SC3326
|
512Kb / 5P |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
2SC4213
|
507Kb / 5P |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
RN1441
|
697Kb / 9P |
Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications
|
2SC5232
|
160Kb / 4P |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
|