2SK1359

2002-09-04

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII

.5

)

2SK1359

DC−DC Converter and Motor Drive Applications

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement−mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

1000

V

1000

V

Gate−source voltage

±30

V

DC

(Note 1)

5

Drain current

Pulse (Note 1)

15

A

Drain power dissipation (Tc = 25°C)

125

W

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.0

°C / W

Thermal resistance, channel to

ambient

50

°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

This transistor is an electrostatic sensitive device.

Please handle with caution.

Unit: mm

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

JEDEC

―

JEITA

―

TOSHIBA

2-16C1B

Weight: 4.6 g (typ.)