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TPC8029 Folha de dados(PDF) 4 Page - Toshiba Semiconductor |
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TPC8029 Folha de dados(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8029 2009-09-29 4 100 100 5 6 VGS = 10 V 4.5 1 100 10 0.1 1 10 Ta = −55°C 25 100 0.1 1 10 0.1 1 10 100 1000 9 ID = 18 A 4.5 0 2 4 6 8 10 0 0.04 0.08 0.12 0.16 0.20 Ta = −55°C 100°C 25°C 1 2 3 4 0 10 20 30 40 50 0 3.8 VGS = 3 V 3.4 3.6 4.5 4 3.2 3.3 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 3.1 6 3.8 10 3.6 4 8 4.5 3.2 0 0.4 0.8 1.2 1.6 2 0 10 20 30 40 50 6 3.4 VGS = 3 V 3.1 3.3 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Drain −source voltage VDS (V) Drain-source voltage VDS (V) Gate −source voltage VGS (V) Gate −source voltage VGS (V) Drain current ID (A) Drain current ID (A) 8,10 |
Nº de peça semelhante - TPC8029 |
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Descrição semelhante - TPC8029 |
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