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TPC8035-H Folha de dados(PDF) 4 Page - Toshiba Semiconductor |
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TPC8035-H Folha de dados(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8035-H 2008-08-22 4 ID – VDS ID – VDS VGS = 2.3 V 2.9 4.5 2.5 2.6 2.7 2.8 2 40 30 20 10 0 50 0 0.8 1.6 1.2 0.4 8 10 5 6 VGS = 2.3 V 2.4 2.5 2.6 2.7 2.65 20 12 8 0 16 4 0 0.2 0.4 0.6 0.8 1 8 10 2.55 4.5 5 6 VGS = 10 V 4.5 1 0.1 1 10 10 100 25 100 Ta = −55°C 100 0.1 1 100 10 10 0.1 1000 1 ID = 18 A 9 4.5 10 0 0.15 0.2 0 2 4 6 8 0.1 0.05 Ta = −55°C 25 100 0 0 1 2 3 16 40 24 32 8 4 5 Drain current ID (A) RDS (ON) – ID Common source Ta = 25 ℃ Pulse test Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) ID – VGS Common source VDS = 10 V Pulse test Gate-source voltage VGS (V) VDS – VGS Common source Ta = 25℃ Pulse test Drain current ID (A) ⎪Yfs⎪ – ID Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test |
Nº de peça semelhante - TPC8035-H |
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Descrição semelhante - TPC8035-H |
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