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TPC8120 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças TPC8120
Descrição Electrónicos  Field Effect Transistor Silicon P Channel MOS Type (U-MOS??
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TPC8120
2009-07-27
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
Rth (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
Rth (ch-a)
125
°C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = −18 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
• on lower left of the marking indicates Pin 1.
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
Note 6: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
T P C 812 0
Lot No.
(weekly code)
Note 6
Part No.
(or abbreviation code)


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