TPC8216-H datasheet(3/7 Pages) TOSHIBA

Nome de Peças	TPC8216-H

Descrição Electrónicos	Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??H)

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC8216-H

2009-02-23

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

nA

Drain cutoff current

IDSS

VDS = 30 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

⎯

V

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

15

⎯

Gate threshold voltage

Vth

VDS = 10 V, ID = 0.1 mA

1.3

⎯

2.3

V

RDS (ON)

VGS = 4.5 V, ID = 3.2 A

⎯

16.5

23.0

Drain-source ON-resistance

RDS (ON)

VGS = 10 V , ID = 3.2 A

⎯

13.6

20.0

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V , ID = 3.2 A

9.5

19

⎯

S

Input capacitance

Ciss

⎯

900

1170

Reverse transfer capacitance

Crss

⎯

65

104

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

200

⎯

pF

Gate resistance

Rg

VDS = 10 V, VGS = 0 V, f = 5 MHz

⎯

2.5

3.6

Ω

Rise time

tr

⎯

2.3

⎯

Turn-on time

ton

⎯

7.0

⎯

Fall time

tf

⎯

9.2

⎯

Switching time

Turn-off time

toff

⎯

28

⎯

ns

VDD ≈ 24 V, VGS = 10 V, ID = 6.4 A

⎯

14

⎯

Total gate charge

(gate-source plus gate-drain)

(Note 7)

Qg

VDD ≈ 24 V, VGS = 5 V, ID = 6.4 A

⎯

7.6

⎯

Gate-source charge 1

Qgs1

⎯

2.4

⎯

Gate-drain (“Miller”) charge

Qgd

⎯

2.5

⎯

Gate switch charge

QSW

VDD ≈ 24 V, VGS = 10 V, ID = 6.4 A

⎯

3.4

⎯

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

25.6

A

Forward voltage (diode)

VDSF

IDR = 6.4 A, VGS = 0 V

⎯

−1.2

V

VDD ≈ 15 V

0 V

VGS

10 V

ID = 3.2 A

出力

Duty

≤ 1%, tw = 10 μs

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