TPC8406-H datasheet(5/11 Pages) TOSHIBA

Nome de Peças	TPC8406-H

Descrição Electrónicos	Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel竊뢓-Channel Ultra-High-Speed U-MOSIII)

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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5 / 11 page

TPC8406-H

2009-09-29

5

P-Channel

Drain-source voltage VDS (V)

ID – VDS

Drain-source voltage VDS (V)

ID – VDS

0

−10

−2

−6

−4

−8

−0.2

0

−1.0

−0.4

−0.6

−0.8

0

−20

−4

−12

−8

−16

−0.4

0

−2

−0.8

−1.2

−1.6

Common source

Ta

= 25°C

Pulse test

VGS = −2.4 V

−2.8

−3.4

−2.5

−3.2

−8

−10

−4

−2.6

−2.7

−4.5

−6

−3

Common source

Ta

= 25°C

Pulse test

VGS = −2.4 V

−3.2

−3.4

−2.6

−8

−10

−4

−2.8

−3.0

−4.5

−6

0

−0.3

−0.4

−0.5

0

−4

−6

−8

−10

−12

−0.2

−0.1

0

−1

−2

−3

−10

−30

−15

−20

−5

Gate-source voltage VGS (V)

ID – VGS

Gate-source voltage VGS (V)

VDS – VGS

ID = −6.5 A

−3.3

−1.7

Common source

Ta

= 25℃

Pulse test

−25

−4

−2

Ta

= −55°C

25

100

Common source

VDS = −10 V

Pulse test

3

−0.1

−10

30

300

−100

0.1

100

−0.1

−1

−100

−10

10

Drain current ID (A)

RDS (ON) – ID

Drain current ID (A)

⎪Yfs⎪ – ID

1

−1

25

100

Ta

= −55°C

Common source

VDS = −10 V

Pulse test

VGS = −10 V

Common source

Ta

= 25°C

Pulse test

−4.5 V

10

100

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