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MC-4532CD647 Folha de dados(PDF) 1 Page - Elpida Memory |
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MC-4532CD647 Folha de dados(HTML) 1 Page - Elpida Memory |
1 / 16 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for availability and additional information. MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE DATA SHEET Document No. E0054N20 (Ver. 2.0) Date Published March 2001 CP (K) Printed in Japan Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. Description The MC-4532CD647EF, MC-4532CD647PF and MC-4532CD647XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surface- mounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features • 33,554,432 words by 64 bits organization • Clock frequency and access time from CLK. Part number /CAS latency Clock frequency (MAX.) Access time from CLK (MAX.) MC-4532CD647EF-A75 CL = 3 133 MHz 5.4 ns CL = 2 100 MHz 6.0 ns MC-4532CD647PF-A75 CL = 3 133 MHz 5.4 ns CL = 2 100 MHz 6.0 ns MC-4532CD647XF-A75 CL = 3 133 MHz 5.4 ns CL = 2 100 MHz 6.0 ns • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Pulsed interface • Possible to assert random column address in every cycle • Quad internal banks controlled by BA0 and BA1 (Bank Select) • Programmable burst-length (1, 2, 4, 8 and full page) • Programmable wrap sequence (Sequential / Interleave) • Programmable /CAS latency (2, 3) • Automatic precharge and controlled precharge • CBR (Auto) refresh and self refresh • All DQs have 10 Ω ±10 % of series resistor • Single 3.3 V ± 0.3 V power supply • LVTTL compatible • 4,096 refresh cycles/64 ms • Burst termination by Burst Stop command and Precharge command • 168-pin dual in-line memory module (Pin pitch = 1.27 mm) • Unbuffered type • Serial PD This product became EOL in September, 2002. |
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