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CSD16408Q5 Folha de dados(PDF) 5 Page - Texas Instruments

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Nome de Peças CSD16408Q5
Descrição Electrónicos  N-Channel NexFET Power MOSFET
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
Logo TI - Texas Instruments

CSD16408Q5 Folha de dados(HTML) 5 Page - Texas Instruments

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TC − Case Temperature − °C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−75
−25
25
75
125
175
G007
ID = 20A
VGS = 10V
0.0
0.2
0.4
0.6
0.8
1.0
VSD − Source to Drain Voltage − V
G008
TC = 125°C
TC = 25°C
100
1
0.01
0.0001
0.001
0.1
10
V
-DraintoSourceVoltage-V
DS
G009
1k
10
0.01
1
100
0.1
0.01
0.1
10
100
1
1ms
10ms
100ms
DC
1s
SinglePulse
AreaLimited
byRDS(on)
TypicalR
=100 C/W(minCu)
q
JA
o
t(AV) − Time in Avalanche − ms
G010
1k
10
1
100
0.001
0.01
1
100
0.1
TC = 25°C
TC = 125°C
10
TC − Case Temperature − °C
0
20
40
60
80
100
120
−50
−25
0
25
50
75
100
125
150
175
G011
CSD16408Q5
www.ti.com
SLPS228 – OCTOBER 2009
TYPICAL MOSFET CHARACTERISTICS (continued)
TA = 25°C unless otherwise stated
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2009, Texas Instruments Incorporated
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