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IXZH10N50LB Folha de dados(PDF) 2 Page - IXYS Corporation

Nome de Peças IXZH10N50LB
Descrição Electrónicos  RF Power MOSFET
Download  9 Pages
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Fabricante Electrônico  IXYS [IXYS Corporation]
Página de início  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXZH10N50LB Folha de dados(HTML) 2 Page - IXYS Corporation

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IXZH10N50LA/B
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
Ciss
598
pF
Coss
VGS = 0 V, VDS = 0.8 VDSS(MAX),
f = 1 MHz
78
pF
Crss
8
pF
Td(on)
4
ns
Ton
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 1 Ω (External)
3
ns
Td(off)
4
ns
Toff
5
ns
VHF COMMUNICATIONS
min.
typ.
max.
Gps
VDD= 50V, Pout=200W, f=175MHz
13
16
Drain Efficiency VDD= 50V, Pout=200W, f=175MHz
50
60
Load Mismatch VDD= 150V, Pout=300W, f=175MHz
TBD
db
%
3T MRI
min.
typ.
max.
Gps(1)
VDD=150V, POUT=475W, F=128MHz
12
13
db
Drain Efficiency VDD= 50V, Pout=200W, f=175MHz
60
65
%
Zin= 0.59-J0.90
Zout= 5.86+J9.34
(1) - As measured under pulsed conditions (5 ms, 5%) with a gated Bias in
Class AB, at P1dB.


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