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IXZH10N50LB Folha de dados(PDF) 2 Page - IXYS Corporation |
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IXZH10N50LB Folha de dados(HTML) 2 Page - IXYS Corporation |
2 / 9 page IXZH10N50LA/B RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. Ciss 598 pF Coss VGS = 0 V, VDS = 0.8 VDSS(MAX), f = 1 MHz 78 pF Crss 8 pF Td(on) 4 ns Ton VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 Ω (External) 3 ns Td(off) 4 ns Toff 5 ns VHF COMMUNICATIONS min. typ. max. Gps VDD= 50V, Pout=200W, f=175MHz 13 16 Drain Efficiency VDD= 50V, Pout=200W, f=175MHz 50 60 Load Mismatch VDD= 150V, Pout=300W, f=175MHz TBD db % 3T MRI min. typ. max. Gps(1) VDD=150V, POUT=475W, F=128MHz 12 13 db Drain Efficiency VDD= 50V, Pout=200W, f=175MHz 60 65 % Zin= 0.59-J0.90 Zout= 5.86+J9.34 (1) - As measured under pulsed conditions (5 ms, 5%) with a gated Bias in Class AB, at P1dB. |
Nº de peça semelhante - IXZH10N50LB |
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Descrição semelhante - IXZH10N50LB |
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