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IXZR18N50 Folha de dados(PDF) 1 Page - IXYS Corporation

Nome de Peças IXZR18N50
Descrição Electrónicos  Z-MOS RF Power MOSFET
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Fabricante Electrônico  IXYS [IXYS Corporation]
Página de início  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXZR18N50 Folha de dados(HTML) 1 Page - IXYS Corporation

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IXZR18N50 & IXZR18N50A/B
Z-MOS RF Power MOSFET
VDSS
=
500 V
ID25
=
19 A
RDS(on)
0.37 Ω
PDC
=
350 W
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
19
A
IDM
Tc = 25°C, pulse width limited by TJM
95
A
IAR
Tc = 25°C
19
A
EAR
Tc = 25°C
TBD
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5
V/ns
IS = 0
>200
V/ns
PDC
350
W
PDHS
Tc = 25°C, Derate 4.4W/°C above 25°C
TBD
W
PDAMB
Tc = 25°C
3.0
W
RthJC
TBD
C/W
RthJHS
TBD
C/W
Symbol
Test Conditions
Characteristic Values
min.
typ.
max.
VDSS
VGS = 0 V, ID = 4 ma
500
V
VGS(th)
VDS = VGS, ID = 250µΑ
4.6
V
IGSS
VGS = ±20 VDC, VDS = 0
±100
nA
IDSS
VDS = 0.8VDSS
TJ = 25C
VGS=0
TJ
=125C
50
1
µA
mA
RDS(on)
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.37
gfs
VDS = 50 V, ID = 0.5ID25, pulse
test
6.7
S
TJ
-55
+175
°C
TJM
175
°C
Tstg
-55
+ 175
°C
TL
1.6mm(0.063 in) from case for 10
s
300
°C
Weight
3.5
g
(TJ = 25°C unless otherwise specified)
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced Z-MOS process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
Easy to mount—no insulators needed
High power density
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications


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