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TC551001BPL Folha de dados(PDF) 8 Page - Toshiba Semiconductor |
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TC551001BPL Folha de dados(HTML) 8 Page - Toshiba Semiconductor |
8 / 13 page TC551001BPL/BFL/BFTL/BTRL-70L/85L Static RAM SR01020795 8 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC . Data Retention Characteristics (Ta = 0 ~ 70 °C) *3 µA (max.) Ta = 0 ~ 40°C CE1 Controlled Data Retention Mode (1) CE2 Controlled Data Retention Mode (3) Notes: 1. In the CE1 controlled data retention mode, minimum standby current is achieved under the condition CE2 ≤ 0.2V or CE2 ≥ V DD - 0.2V. 2. If the VIH of CE1 is 2.2V in operation, during the period that the VDD voltage is going down from 4.5V to 2.4V, IDDS1 current flows. 3. In the CE2 controlled data retention mode, minimum standby current is achieved under the condition CE2 ≤ 0.2V. SYMBOL PARAMETER MIN. TYP. MAX. UNIT VDH Data Retention Supply Voltage 2.0 – 5.5 V IDDS2 Standby Current VDD = 3.0V – – 15* µA VDD = 5.5V – – 30 tCDR Chip Deselect to Data Retention Mode 0 – – ns tR Recovery Time 5 – – ms |
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