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CSD17305Q5A Folha de dados(PDF) 4 Page - Texas Instruments

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Nome de Peças CSD17305Q5A
Descrição Electrónicos  30V, N-Channel NexFET??Power MOSFETs
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
Logo TI - Texas Instruments

CSD17305Q5A Folha de dados(HTML) 4 Page - Texas Instruments

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VDS - Drain-to-Source Voltage - V
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
50
60
70
80
VGS = 2.5V
VGS = 3V
VGS = 3.5V
VGS = 4.5V
VGS = 8V
G001
VGS - Gate-to-Source Voltage - V
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
60
70
80
TC = -55°C
TC = 25°C
TC = 125°C
G002
VDS = 5V
Qg - Gate Charge - nC
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
G003
ID = 30A
VDS = 15V
VDS - Drain-to-Source Voltage - V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G004
f = 1MHz
VGS = 0V
TC - Case Temperature - °C
-75
-25
25
75
125
175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
G005
ID = 250µA
VGS - Gate-to-Source Voltage - V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
TC = 25°C
TC = 125°C
G006
ID = 30A
CSD17305Q5A
SLPS254 – FEBRUARY 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate to Source Voltage
4
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