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CSD17310Q5A Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD17310Q5A Folha de dados(HTML) 1 Page - Texas Instruments |
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1 / 10 page  1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 VGS - Gate-to-Source Voltage - V 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 TC = 25°C TC = 125°C G006 ID = 20A Qg - Gate Charge - nC 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8 G003 ID = 20A VDS = 15V CSD17310Q5A www.ti.com SLPS255 – FEBRUARY 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17310Q5A 1 FEATURES PRODUCT SUMMARY 2 • Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V • Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 8.9 nC • Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.1 nC • Avalanche Rated VGS = 3V 5.7 m Ω RDS(on) Drain to Source On Resistance VGS = 4.5V 4.5 m Ω • Pb Free Terminal Plating VGS = 8V 3.9 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.3 V • Halogen Free • SON 5-mm × 6-mm Plastic Package Text and br Added for Spacing Text and br Added for Spacing APPLICATIONS ORDERING INFORMATION • Notebook Point of Load Device Package Media Qty Ship SON 5-mm × 6-mm 13-Inch Tape and • Point-of-Load Synchronous Buck in CSD17310Q5A 2500 Plastic Package Reel Reel Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications Text and br Added for Spacing Text and br Added for Spacing DESCRIPTION ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, VDS Drain to Source Voltage 30 V and optimized for 5V gate drive applications. VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 100 A ID Top View Continuous Drain Current(1) 21 A IDM Pulsed Drain Current, TA = 25°C (2) 134 A PD Power Dissipation(1) 3.1 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 168 mJ ID = 58A, L = 0.1mH, RG = 25Ω (1) RqJA = 40°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% Text 4 Spacing Text 4 Spacing RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Nº de peça semelhante - CSD17310Q5A |
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Descrição semelhante - CSD17310Q5A |
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