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2SK3096 Folha de dados(PDF) 2 Page - Sanyo Semicon Device |
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2SK3096 Folha de dados(HTML) 2 Page - Sanyo Semicon Device |
2 / 3 page 2SK3096 No.8625-2/3 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Total Gate Charge Qg VDS=200V, ID=7A, VGS=10V 27 nC Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns Rise Time tr See specified Test Circuit. 20 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 60 ns Fall Time tf See specified Test Circuit. 35 ns Diode Forward Voltage VSD IS=7A, VGS=0V 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7507-002 10.2 5.1 4.5 1.3 3.6 1.2 0.8 0.4 2.55 2.55 12 3 1 : Gate 2 : Drain 3 : Source SANYO : TO-220 PW=1μs P.G RGS 50Ω G S D ID=3.5A RL=57.1Ω VDD=200V VGS=15V VOUT 2SK3096 D.C.≤0.5% PD -- Tc Case Temperature, Tc -- °C Drain-to-Source Voltage, VDS -- V A S O IT15419 IT15418 0 20 40 60 80 100 120 140 160 10 0 30 20 40 60 50 70 80 1.0 23 5 7 2 10 35 7 2 1.0 7 5 3 2 0.1 0.1 2 10 7 5 3 2 3 Operation in this area is limited by RDS(on). IDP=28A (PW≤10μs) ID=7A 100 35 2 3 5 77 5 Tc=25 °C Single pulse |
Nº de peça semelhante - 2SK3096 |
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Descrição semelhante - 2SK3096 |
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