BU208D datasheet(1/1 Pages) WINGS

Nome de Peças	BU208D

Descrição Electrónicos	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

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Fabricante Electrônico	WINGS [Wing Shing Computer Components]

Página de início	http://www.wingshing.com/en

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GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in a

metal envelope with integrated efficiency diode,prim-

arily for use in horizontal deflection circuites of colour

television receivers

QUICK REFERENCE DATA

LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0V

1500

V

CEO

Collector-emitter voltage (open base)

600

V

I

C

Collector current (DC)

5

A

I

CM

Collector current peak value

7.5

A

P

tot

Total power dissipation

T

mb

25

125

W

V

CEsat

Collector-emitter saturation voltage

I

C = 4.5A; IB = 2.0A

1.0

V

I

csat

Collector saturation current

f = 16KHz

A

V

F

Diode forward voltage

I

F = 4.5A

1.5

V

t

f

Fall time

I

C=4.5A,IB1=-1/2IB2=1.8A,VCC=100V

1.0

s

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0V

1500

V

CEO

Collector-emitter voltage (open base)

600

V

EBO

Emitter-base voltage(open collector)

5

V

I

C

Collector current (DC)

5

A

I

B

Base current (DC)

2

A

I

BM

Base current peak value

4

A

P

tot

Total power dissipation

Tmb

25

125

W

T

stg

Storage temperature

-55

150

T

j

Junction temperature

150

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

I

CE

Collector-emitter cut-off current

V

BE = 0V; VCE = VCESMmax

1.0

mA

I

CES

V

BE = 0V; VCE = VCESMmax

2.0

mA

T

j = 125

V

CEOsust

Collector-emitter sustaining voltage

I

B = 0A; IC = 100mA

V

L = 25mH

V

CEsat

Collector-emitter saturation voltages

I

C = 4.5A; IB = 2.0A

1.0

V

BEsat

Base-emitter satuation voltage

I

C = 4.5A; IB = 2A

1.5

V

h

FE

DC current gain

I

C = 1.0A; VCE = 5V

8

30

V

F

Diode forward voltage

I

F = 4.5A

1.5

V

f

T

Transition frequency at f = 1MHz

I

C = 0.1A; VCE = 10V

3

MHz

C

c

Collector capacitance at f = 1MHz

V

CB = 10V

pF

t

s

Switching times(16KHz line deflecton circuit)

I

C=4.5A,IB1=-1/2IB2=1.8A,VCC=100V

8.0

s

t

f

Turn-off storage time Turn-off fall time

C=4.5A,IB1=-1/2IB2=1.8A,VCC=100V

1.0

s

ELECTRICAL CHARACTERISTICS

TO-3

Wing Shing Computer Components Co., (H.K.)Ltd.

Tel:(852)2341 9276

Fax:(852)2797 8153

Homepage: http://www.wingshing.com

E-mail:

wsccltd@hkstar.com

BU208D

SILICON DIFFUSED POWER TRANSISTOR

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