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SS6802CGSTB Folha de dados(PDF) 8 Page - Silicon Standard Corp.

Nome de Peças SS6802CGSTB
Descrição Electrónicos  TWO-CELL LITHIUM-ION BATTERY PROTECTION IC
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Fabricante Electrônico  SSC [Silicon Standard Corp.]
Página de início  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SS6802CGSTB Folha de dados(HTML) 8 Page - Silicon Standard Corp.

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02/26/2008 Rev.1.00
www.SiliconStandard.com
8
CS pin and overcurrent delay time TOI is
tabulated as below.
VCS (V)
TOI (S)
150m
9.0m
200m
5.6m
300m
2.8m
360m
2.0m
1V
540
µ
3V
290
µ
5V
270
µ
Unbalanced Discharge after Overcharge
When either of the battery cells is overcharged,
the SS6802 will automatically discharge the
overcharged cell at about 7.7mA until the voltage
of the overcharged cell is equal to the voltage of
the other cell. If the voltage of the other cell is
below VOCR, the internal cell-balance “bleeding”
will proceed until the voltage of the overcharged
cell decreases to VOCR.
DESIGN GUIDE
Adjustment of Overcharge and
Overdischarge Delay Time
Both the overcharge and overdischarge delay
times default to 25mS and can be extended by
adding the external capacitors CTC and CTD,
respectively. Increasing the capacitance value will
increase
the
delay
time.
The
relationship
between capacitance of the external capacitors
and delay time is tabulated as below:
CTC (F)
TOC (S)
0
µ
25m
0.1
µ
320m
0.3
µ
890m
0.47
µ
1.12
0.57
µ
1.43
CTD (F)
TOD (S)
0
µ
25m
0.1
µ
320m
0.3
µ
820m
0.47
µ
1.08
0.57
µ
1.39
Selection of External Control MOSFETs
Because the overcurrent protection voltage is
preset, the threshold current for overcurrent
detection is determined by the turn-on resistance
of the discharge control MOSFET M1. The
turn-on
resistance
of
the
external
control
MOSFETs can be determined by the equation:
RON=VOIP/IT (IT is the overcurrent threshold
current).
For
example,
if
the
overcurrent
threshold current IT is designed to be 5A, the
turn-on
resistance
of
the
external
control
MOSFETs must be 30m
Ω. Users should be
aware that turn-on resistance of the MOSFET
changes with temperature variation due to heat
dissipation. It changes with the voltage between
gate and source as well. (Turn-on resistance of a
MOSFET increases as the voltage between gate
and
source
decreases).
Once
the
turn-on
resistance of the external MOSFET changes, the
SS6802


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