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SS8000GQTY Folha de dados(PDF) 8 Page - Silicon Standard Corp. |
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SS8000GQTY Folha de dados(HTML) 8 Page - Silicon Standard Corp. |
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8 / 14 page  www.SiliconStandard.com 8 of 14 SS8000G APPLICATION INFORMATION (cont.) Low Dropout Regulator ( LDOs ) and Reference The SS8000 integrates seven LDOs that are optimized for their given functions by balancing quiescent current, dropout voltage, line/load regulation, ripple rejection, and output noise. Digital Core LDO (Vcore) The digital core LDO is a regulator that can source 200mA (max) with 1.8V output voltage. It supplies the baseband circuitry in the handset. The LDO is optimized for very low quiescent current. Digital IO LDO (Vio) The digital I/O LDO is a regulator that can source 100mA (max) with 2.8V output voltage. It supplies the baseband circuitry in the handset. The LDO is optimized for very low quiescent current and will power up at the same time as the digital core LDO. Analog LDO (Va) The analog LDO is a regulator that can source 150mA (max) with 2.8V output voltage. It supplies the analog sections of the baseband chipsets. The LDO is opti- mized for low frequency ripple rejection in order to reject the ripple coming from the RF power amplifier burst fre- quency at 217kHz. TCXO LDO (Vtcxo) The TCXO LDO is a regulator that can source 20mA (max) with 2.8V output voltage. It supplies the temperature com- pensated crystal oscillator, which needs its own ultra low noise supply and very good ripple rejection ratio. RTC LDO (Vrtc) The RTC LDO is a regulator that can source 200µA (max) with 1.5V output voltage. It charges up a capaci- tor-type backup coin cell to run the real-time clock mod- ule. The LDO features the reverse current protection and is optimized for ultra low quiescent current since it is always on except when the battery voltage is below 2.5V. Memory LDO (Vm) The memory LDO is a regulator that can source 150mA (max) with 1.8V or 2.8V output voltage, selected ac- cording to the supply specs of the memory chips. It sup- plies the memory circuitry in the handset. The LDO is optimized for very low quiescent current and will power up at the same time as the digital core LDO. SIM LDO (Vsim) The SIM LDO is a regulator that can source 20mA (max) with 1.8V or 3.0V output voltage, selected according to the supply specs of the subscriber identity modules (SIM) card. It supplies the SIMs in the handset. The LDO is controlled independently of the others LDO. Reference Voltage Output (Vref) The reference voltage output is a low noise, high PSRR and high precision reference with a guaranteed accuracy of 1.5% over temperature. It is used as an internal system reference within the SS8000. However, to maintain ac- curate specs on every LDO output voltage, it is important to avoid loading the reference voltage and it should be bypassed to GND with 100 nF minimum. SIM Card Interface The SIM card interface circuitry of the SS8000 meets all ETSI and IMT-2000 SIM interface requirements. It provides level shifting needs for the low-voltage GSM controller to communicate with either 1.8V or 3V SIM cards. All SIM cards contain a clock input, a reset input, and a bi-directional data input/output. The clock and reset inputs to SIM cards are level shifted from the sup- ply of the digital IO (Vio) of the baseband chipset to the SIM supply (Vsim). The bi-directional data bus is inter- nally pulled high with a 20kohm resistor on the controller side and with a 10kohm resistor on the SIM side. All pins that connect to the SIM card (Vsim, SRST, SCLK, SIO) withstand over 5kV of human-body-mode ESD. In order to ensure proper ESD protection, careful board layout is required. Vibrator, Alerter, LED Switches Three built-in open-drain output switches drive the vi- brator motor, alerter beeper and LEDs in the handset. Each switch is controlled by the baseband chipset with enable pins. The LED switch can sink 150mA to drive up to 10 LEDs simultaneously for backlight. The vibrator switch can sink 250mA for a vibrator motor. The alerter switch can sink 300mA to drive the beeper. All the open-drain output switches are high impedance when disabled. 12/06/2004 Rev.2.10 |
Nº de peça semelhante - SS8000GQTY |
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Descrição semelhante - SS8000GQTY |
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