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74AUP1G38GF Folha de dados(PDF) 9 Page - NXP Semiconductors |
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74AUP1G38GF Folha de dados(HTML) 9 Page - NXP Semiconductors |
9 / 15 page 74AUP1G38_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 22 June 2009 9 of 15 NXP Semiconductors 74AUP1G38 Low-power 2-input NAND gate (open drain) [1] For measuring enable and disable times RL =5kΩ, for measuring propagation delays, setup and hold times and pulse width RL =1MΩ. Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 8. Load circuitry for switching times 001aac521 DUT RT VI VO VEXT VCC RL 5 k Ω CL G Table 10. Test data Supply voltage Load VEXT VCC CL RL[1] tPLH, tPHL tPZH, tPHZ tPZL, tPLZ 0.8 V to 3.6 V 5 pF, 10 pF, 15 pF and 30 pF 5 k Ω or 1 MΩ open GND 2 × VCC |
Nº de peça semelhante - 74AUP1G38GF |
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Descrição semelhante - 74AUP1G38GF |
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