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74AUP2GU04GM Folha de dados(PDF) 6 Page - NXP Semiconductors |
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74AUP2GU04GM Folha de dados(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 74AUP2GU04_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 3 July 2009 6 of 16 NXP Semiconductors 74AUP2GU04 Low-power dual unbuffered inverter 11. Dynamic characteristics VOL LOW-level output voltage VI = GND or VCC IO = 20 µA; VCC = 0.8 V to 3.6 V - - 0.11 V IO = 1.1 mA; VCC = 1.1 V - - 0.33 × V CC V IO = 1.7 mA; VCC = 1.4 V - - 0.41 V IO = 1.9 mA; VCC = 1.65 V - - 0.39 V IO = 2.3 mA; VCC = 2.3 V - - 0.36 V IO = 3.1 mA; VCC = 2.3 V - - 0.50 V IO = 2.7 mA; VCC = 3.0 V - - 0.36 V IO = 4.0 mA; VCC = 3.0 V - - 0.50 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.75 µA ICC supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 1.4 µA Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max (85 °C) Max (125 °C) CL = 5 pF tpd propagation delay nA to nY; see Figure 7 [2] VCC = 0.8 V - 6.2 - - - - ns VCC = 1.1 V to 1.3 V 0.9 2.3 4.4 0.9 4.8 5.3 ns VCC = 1.4 V to 1.6 V 0.7 1.7 3.1 0.6 3.4 3.8 ns VCC = 1.65 V to 1.95 V 0.5 1.4 2.6 0.5 2.9 3.2 ns VCC = 2.3 V to 2.7 V 0.4 1.1 2.0 0.4 2.3 2.6 ns VCC = 3.0 V to 3.6 V 0.3 1.0 1.8 0.3 2.1 2.4 ns CL = 10 pF tpd propagation delay nA to nY; see Figure 7 [2] VCC = 0.8 V - 9.6 - - - - ns VCC = 1.1 V to 1.3 V 1.2 3.1 6.1 1.2 6.8 7.5 ns VCC = 1.4 V to 1.6 V 1.0 2.3 4.0 0.9 4.6 5.1 ns VCC = 1.65 V to 1.95 V 0.8 1.9 3.3 0.7 3.8 4.2 ns VCC = 2.3 V to 2.7 V 0.6 1.5 2.7 0.6 3.1 3.5 ns VCC = 3.0 V to 3.6 V 0.5 1.3 2.4 0.5 2.7 3.0 ns |
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Descrição semelhante - 74AUP2GU04GM |
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