74LVC2G38GM datasheet(7/16 Pages) NXP

Nome de Peças	74LVC2G38GM

Descrição Electrónicos	Dual 2-input NAND gate; open drain

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74LVC2G38_7

Product data sheet

Rev. 07 — 20 March 2009

7 of 16

NXP Semiconductors

74LVC2G38

Dual 2-input NAND gate; open drain

11. Dynamic characteristics

[1]

Typical values are measured at nominal VCC and at Tamb =25 °C.

[2]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

2

× f

o) = sum of outputs.

12. Waveforms

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground 0 V); for test circuit see Figure 9.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

tPZL

OFF-state to LOW

propagation delay

nA, nB to nY; see Figure 8

VCC = 1.65 V to 1.95 V

1.2

3.0

8.6

1.2

10.8

ns

VCC = 2.3 V to 2.7 V

0.7

1.8

4.8

0.7

6.0

ns

VCC = 2.7 V

0.7

2.5

4.4

0.7

5.5

ns

VCC = 3.0 V to 3.6 V

0.7

2.1

4.1

0.7

5.2

ns

VCC = 4.5 V to 5.5 V

0.5

1.5

3.3

0.5

4.2

ns

tPLZ

LOW to OFF-state

propagation delay

nA, nB to nY; see Figure 8

VCC = 1.65 V to 1.95 V

1.2

3.0

8.6

1.2

10.8

ns

VCC = 2.3 V to 2.7 V

0.7

1.8

4.8

0.7

6.0

ns

VCC = 2.7 V

0.7

2.5

4.4

0.7

5.5

ns

VCC = 3.0 V to 3.6 V

0.7

2.1

4.1

0.7

5.2

ns

VCC = 4.5 V to 5.5 V

0.5

1.5

3.3

0.5

4.2

ns

CPD

power dissipation

capacitance

per gate; VI = GND to VCC

[2]

-5

-

pF

Measurement points are given in Table 9

Fig 8.

Inputs nA and nB to output nY propagation delay times

mnb132

tPLZ

VX

nY output

nA, nB input

VI

VCC

VM

VOL

GND

tPZL

VM

Nº de peça semelhante - 74LVC2G38GM

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NXP Semiconductors	74LVC2G38GM	90Kb / 15P	Dual 2-input NAND gate (open drain) 2004 Oct 18
Nexperia B.V. All right...	74LVC2G38GM	303Kb / 20P	Dual 2-input NAND gate; open drain Rev. 14 - 21 June 2022

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Descrição semelhante - 74LVC2G38GM

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Nexperia B.V. All right...	74LVC2G38	303Kb / 20P	Dual 2-input NAND gate; open drain Rev. 14 - 21 June 2022
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NXP Semiconductors	74LVC2G38	90Kb / 15P	Dual 2-input NAND gate (open drain) 2004 Oct 18
STMicroelectronics	74V2T03	128Kb / 7P	DUAL 2-INPUT OPEN DRAIN NAND GATE
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Nexperia B.V. All right...	74LVC1G38	261Kb / 17P	2-input NAND gate; open drain Rev. 10 - 12 January 2022
STMicroelectronics	74VHC03	54Kb / 7P	QUAD 2-INPUT OPEN DRAIN NAND GATE June 1999
Toshiba Semiconductor	TC74HC03AP	208Kb / 7P	Quad 2-Input NAND Gate (open drain)
Texas Instruments	SN74LVC2G38	255Kb / 11P	[Old version datasheet] DUAL 2 INPUT NAND GATE WITH OPEN DRAIN OUTPUT

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