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BD00HC5WEFJ Folha de dados(PDF) 10 Page - Rohm

Nome de Peças BD00HC5WEFJ
Descrição Electrónicos  1.5A Secondary Variable Output LDO Regulators for Local Power Supplies
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Fabricante Electrônico  ROHM [Rohm]
Página de início  http://www.rohm.com
Logo ROHM - Rohm

BD00HC5WEFJ Folha de dados(HTML) 10 Page - Rohm

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2010.04 - Rev.A
© 2010 ROHM Co., Ltd. All rights reserved.
BD00HC5WEFJ
Technical Note
10/11
(11). Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or
transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be
used.
(12). Ground Wiring Pattern.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing
a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations
caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND
wiring pattern of any external components, either.
Resistor
Transistor (NPN)
N
N
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin A
N
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin B
C
B
E
N
GND
Pin A
Parasitic
element
Pin B
Other adjacent elements
E
B
C
GND
Parasitic
element


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