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2SJ360 Folha de dados(PDF) 3 Page - Toshiba Semiconductor |
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2SJ360 Folha de dados(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SJ360 2009-09-29 3 −16 −20 −4 −5 −8 −10 −0.8 −1.0 25 −0.1 −0.3 −0.5 −1 −3 −5 −10 0.3 3 1 0.5 10 5 VGS = −4 V −10 0.3 3 1 0.5 Tc = −55°C 100 10 5 −0.1 −0.3 −0.5 −1 −3 −5 −10 0 −4 −8 −12 ID = −2 A −1.5 −1.0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −0.5 0 −1 −2 −3 100 Tc = −55°C 25 0 −0.4 −0.8 −1.2 −1.6 −2.0 0 VGS = −2.5 V 0 −2 −4 −6 −0.4 −0.8 −1.2 −1.6 −2.0 −8 −10 −6 −4 −3.8 −3.5 −3.3 −3 −2.8 −5 0 −0.2 −0.4 −0.6 0 VGS = −2.5 V −10 −0.2 −0.4 −0.6 −0.8 −1.0 −8 −6 −5 −4.5 −3.5 −4 −3 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Common source VDS = −10 V Pulse test Common source Ta = 25°C Pulse test Common source VDS = −10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) |
Nº de peça semelhante - 2SJ360_09 |
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Descrição semelhante - 2SJ360_09 |
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