2SJ401

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L

2

−π−MOSV)

2SJ401

DC−DC Converter, Relay Drive and Motor Drive

Applications

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

−60

V

−60

V

Gate−source voltage

±20

V

DC

(Note 1)

−20

A

Drain current

Pulse(Note 1)

−80

A

Drain power dissipation (Tc = 25°C)

100

W

Single pulse avalanche energy

(Note 2)

800

mJ

Avalanche current

−20

A

Repetitive avalenche energy (Note 3)

10

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.25

°C / W

Thermal resistance, channel to ambient

83.3

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)