2SK2964

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

2

−π−MOSVI)

2SK2964

Chopper Regulators, DC−DC Converters and Motor

DriveApplications

4-V gate drive

Characteristics

Symbol

Rating

Unit

Drain−source voltage

30

V

30

V

Gate−source voltage

±20

V

DC

(Note 1)

2

A

Drain current

Pulse (Note 1)

6

A

Drain power dissipation

0.5

W

Drain power dissipation

(Note 2)

1.5

W

Single pulse avalanche energy

(Note 3)

56

mJ

Avalanche current

2

A

Repetitive avalanche energy (Note 4)

0.05

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to ambient

250

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Handle with care.

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-5K1B

Weight: 0.05 g (typ.)