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TPC8012-H Folha de dados(PDF) 5 Page - Toshiba Semiconductor |
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TPC8012-H Folha de dados(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8012-H 2006-01-17 5 0.4 0.8 1.6 0 40 80 120 160 1.2 2.0 0 (1) (2) 0 0 4 12 20 40 80 120 160 200 0 4 8 16 20 VDD = 40 V 160 V VDS 12 16 8 80 V 0 −80 −40 0 40 80 120 160 1.0 2.0 4.0 3.0 5.0 0.1 1 10 100 10 1000 10000 Ciss Coss Crss 100 0 1 10 −0.2 −0.4 −0.6 −0.8 −1.2 VGS = 0 V 1 10 3 0.1 4.5 −1.0 0 −80 −40 0 40 80 120 160 0.2 0.4 0.6 1 VGS = 10 V ID = 2.8A,5.5A,11A 0.8 Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Total gate charge Qg (nC) Dynamic input/output characteristics Common source VDS = 10 V ID = 1 mA Pulse test Common source ID = 1.8 A Ta = 25°C Pulse test Common source Ta = 25°C f = 1 MHz VGS = 0 V Drain-source voltage VDS (V) Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS Common source Pulse test Common source Ta = 25°C Pulse test Ambient temperature Ta (°C) PD – Ta (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s |
Nº de peça semelhante - TPC8012-H |
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Descrição semelhante - TPC8012-H |
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