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TPCS8205 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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TPCS8205 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCS8205 2007-01-16 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V D C (Note 1) ID 5 Drain curren Pulse (Note 1) IDP 20 A Single-device operation (Note 3a) PD (1) 1.1 Drain power dissipation (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) PD(2) 0.5 W Single-device operation (Note 3a) PD (1) 0.6 Drain power dissipation (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.35 W Single pulse avalanche energy (Note 4) EAS 32.5 mJ Avalanche current IAR 5 A Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) EAR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration |
Nº de peça semelhante - TPCS8205_07 |
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Descrição semelhante - TPCS8205_07 |
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