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TPCA8103 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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TPCA8103 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCA8103 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) • High forward transfer admittance: |Yfs| =45S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID − 40 Drain current Pulsed (Note 1) IDP −120 A Drain power dissipation (Tc=25°C) PD 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single pulse avalanche energy (Note 3) EAS 208 mJ Avalanche current IAR − 40 A Repetitive avalanche energy (Tc=25°C) (Note 4) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 5.0±0.2 S 0.05 S A 1.27 0.4±0.1 0.595 0.05 M A 1 4 5 8 0.15±0.05 0.8±0.1 4.25±0.2 1 4 5 8 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
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