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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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TPC8116-H Folha de dados(PDF) 3 Page - Toshiba Semiconductor |
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TPC8116-H Folha de dados(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page  TPC8116-H 2006-01-17 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = −40 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −40 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −20 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4.5 V, ID = − 3.8 A ⎯ 29 37 Drain-source ON-resistance RDS (ON) VGS = −10 V, ID = − 3.8 A ⎯ 24 30 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = − 3.8 A 7 14 ⎯ S Input capacitance Ciss ⎯ 1190 ⎯ Reverse transfer capacitance Crss ⎯ 170 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 250 ⎯ pF Rise time tr ⎯ 5 ⎯ Turn-on time ton ⎯ 12 ⎯ Fall time tf ⎯ 12 ⎯ Switching time Turn-off time toff Duty < = 1%, tw = 10 µs ⎯ 43 ⎯ ns VDD ∼ − −32 V, VGS =−10V, ID = −7.5A ⎯ 27 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − −32 V, VGS = −5 V, ID = − 7.5A ⎯ 15 ⎯ Gate-source charge 1 Qgs1 ⎯ 3.2 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 8.1 ⎯ Gate switch charge QSW VDD ∼ − −32 V, VGS = −10 V, ID = − 7.5A ⎯ 9.7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −30 A Forward voltage (diode) VDSF IDR = −7.5 A, VGS = 0 V ⎯ ⎯ 1.2 V VDD ∼− −20 V -10 V VGS 0 V ID = − 3.8 A VOUT |
Nº de peça semelhante - TPC8116-H |
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Descrição semelhante - TPC8116-H |
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