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CSD17311Q5 Folha de dados(PDF) 1 Page - Texas Instruments

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Nome de Peças CSD17311Q5
Descrição Electrónicos  30V N-Channel NexFET??Power MOSFET
Download  10 Pages
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
Logo TI - Texas Instruments

CSD17311Q5 Folha de dados(HTML) 1 Page - Texas Instruments

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background image
1
D
2
D
3
D
4
D
D
5
G
6
S
7
S
8
S
P0094-01
VGS - Gate-to-Source Voltage - V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
TC = 25°C
TC = 125°C
G006
ID = 30A
Qg - Gate Charge - nC
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
G003
ID = 30A
VDS = 15V
CSD17311Q5
www.ti.com
SLPS257 – MARCH 2010
30V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD17311Q5
PRODUCT SUMMARY
1
FEATURES
VDS
Drain to Source Voltage
30
V
2
Optimized for 5V Gate Drive
Qg
Gate Charge Total (4.5V)
24
nC
Ultra Low Qg and Qgd
Qgd
Gate Charge Gate to Drain
5.2
nC
Low Thermal Resistance
VGS = 3V
2.3
m
Avalanche Rated
RDS(on)
Drain to Source On Resistance
VGS = 4.5V
1.8
m
VGS = 8V
1.6
m
Pb Free Terminal Plating
VGS(th)
Threshold Voltage
1.2
V
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
ORDERING INFORMATION
Device
Package
Media
Qty
Ship
APPLICATIONS
SON 5-mm × 6-mm
13-Inch
Tape and
CSD17311Q5
2500
Plastic Package
Reel
Reel
Notebook Point-of-Load
Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
DESCRIPTION
VDS
Drain to Source Voltage
30
V
The NexFET™ power MOSFET has been designed
VGS
Gate to Source Voltage
+10 / –8
V
to minimize losses in power conversion applications,
Continuous Drain Current, TC = 25°C
100
A
and optimized for 5V gate drive applications.
ID
Continuous Drain Current(1)
32
A
Top View
IDM
Pulsed Drain Current, TA = 25°C
(2)
200
A
PD
Power Dissipation(1)
3.2
W
TJ,
Operating Junction and Storage
–55 to 150
°C
TSTG
Temperature Range
Avalanche Energy, Single Pulse
EAS
638
mJ
ID = 113A, L = 0.1mH, RG = 25Ω
(1) Typical
RqJA = 40°C/W when mounted on a 1-inch
2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch
(1.52-mm) thick FR4 PCB.
(2) Pulse duration
≤300ms, duty cycle ≤2% TextAddedForSpacing
Text_added_for_spacing_Text_added_for_spacing
RDS(on) vs VGS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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