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AMIS-42671 Folha de dados(PDF) 4 Page - ON Semiconductor

Nome de Peças AMIS-42671
Descrição Electrónicos  High Speed Autobaud CAN Transceiver
Download  13 Pages
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

AMIS-42671 Folha de dados(HTML) 4 Page - ON Semiconductor

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AMIS−42671
http://onsemi.com
4
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
Supply Voltage
−0.3
+7
V
VCANH
DC Voltage at Pin CANH
0 < VCC < 5.25 V;
No Time limit
−45
+45
V
VCANL
DC Voltage at Pin CANL
0 < VCC < 5.25 V;
No Time Limit
−45
+45
V
VTxD
DC Voltage at Pin TxD
−0.3
VCC +
0.3
V
VRxD
DC Voltage at Pin RxD
−0.3
VCC +
0.3
V
VAUTB
DC Voltage at Pin AUTB
−0.3
VCC +
0.3
V
VREF
DC Voltage at Pin VREF
−0.3
VCC +
0.3
V
Vtran(CANH)
Transient Voltage at Pin CANH
Note 2
−150
+150
V
Vtran(CANL)
Transient Voltage at Pin CANL
Note 2
−150
+150
V
Vesd
Electrostatic Discharge Voltage at All Pins
Note 3
Note 4
−4
−500
+4
+500
kV
V
Latch−up
Static Latch−up at all Pins
Note 5
100
mA
Tstg
Storage Temperature
−55
+155
°C
TA
Ambient Temperature
−40
+125
°C
TJ
Maximum Junction Temperature
−40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 3).
3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
4. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
Rth(vj−a)
Thermal Resistance from Junction−to−Ambient in SO−8
package
In Free Air
150
k/W
Rth(vj−s)
Thermal Resistance from Junction−to−Substrate of Bare Die
In Free Air
45
k/W


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