© Semiconductor Components Industries, LLC, 2007

July, 2007 - Rev. 12

1

Publication Order Number:

BD179/D

BD179

Plastic Medium-Power

NPN Silicon Transistor

This device is designed for use in 5.0 to 10 Watt audio amplifiers

and drivers utilizing complementary or quasi complementary circuits.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

80

Vdc

Collector-Base Voltage

80

Vdc

Emitter-Base Voltage

5.0

Vdc

Collector Current

3.0

Adc

Base Current

1.0

Adc

Derate above 25

_C

30

240

W

mW/

_C

Operating and Storage Junction

Temperature Range

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction-to-Case

4.16

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

BD179

TO-225

500 Units/Box

3.0 AMPERES

POWER TRANSISTORS

NPN SILICON

80 VOLTS, 30 WATTS

http://onsemi.com

BD179G

TO-225

(Pb-Free)

500 Units/Box

TO-225

CASE 77

STYLE 1

2 1

3

MARKING DIAGRAM

YWW

BD179G

Y

= Year

WW

= Work Week

BD179 = Device Code

G

= Pb-Free Package