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DAC1408D650C1 Folha de dados(PDF) 6 Page - NXP Semiconductors

Nome de Peças DAC1408D650C1
Descrição Electrónicos  Dual 14-bit DAC up to 650 Msps 2, 4 or 8 interpolating
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
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DAC1408D650C1 Folha de dados(HTML) 6 Page - NXP Semiconductors

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DAC1408D650
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 — 11 August 2010
6 of 98
NXP Semiconductors
DAC1408D650
DAC1408D; up to 650 Msps; 2
×, 4× or 8× interpolating with JESD204A
[1]
P: power supply; G: ground; I: input; O: output.
[2]
H = heatsink (exposed die pad to be soldered to GND. A minimum of 81 thermal vias are required)
7.
Limiting values
[1]
The supply voltage VDDA(3V3) may have any value between −0.5 V and +4.6 V provided that the supply
voltage differences
ΔV
CC are respected.
[2]
The supply voltages VDDA(1V8) and VDDD may have any value between −0.5 V and +2.5 V provided that the
supply voltage differences
ΔV
CC are respected.
8.
Thermal characteristics
[1]
In compliance with JEDEC test board, in free air.
VIN_N0
52
I
serial interface lane 0 negative input
VIN_P0
53
I
serial interface lane 0 positive input
VDDD(1V8)
54
P
digital supply voltage 1.8 V
VIN_P1
55
I
serial interface lane 1 positive input
VIN_N1
56
I
serial interface lane 1 negative input
VIN_N2
57
I
serial interface lane 2 negative input
VIN_P2
58
I
serial interface lane 2 positive input
VDDD(1V8)
59
P
digital supply voltage 1.8 V
VIN_P3
60
I
serial interface lane 3 positive input
VIN_N3
61
I
serial interface lane 3 negative input
n.c.
62
-
not connected
n.c.
63
-
not connected
JTAG
64
I
JTAG test mode select (must be grounded)
GND
H[2]
G
ground
Table 2.
Pin description …continued
Symbol
Pin
Type[1]
Description
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDDA(3V3)
analog supply voltage (3.3 V)
[1]
−0.5
+4.6
V
VDDA(1V8)
analog supply voltage (1.8 V)
[2]
−0.5
+2.5
V
VDDD
digital supply voltage
[2]
−0.5
+2.5
V
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
Tj
junction temperature
−40
+125
°C
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction to ambient
[1] 18.7
K/W
Rth(j-c)
thermal resistance from junction to case
[1] <tbd>
K/W


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